Be-doped low-temperature grown GaAs for ultrafast optoelectronic devices and applications

Author

Coutaz, J.-L. ; Roux, J.-F. ; Gaarder, A. ; Marcinkevicius, S. ; Jasinski, J. ; Korona, K. ; Kaminska, M. ; Bertulis, K. ; Krotkus, A.

Author_Institution

LAHC, Savoie Univ., Chambery, France

fYear

2000

fDate

2000

Firstpage

89

Lastpage

96

Abstract

In this paper we review ultrafast optoelectronics devices made from low-temperature grown GaAs and related materials. The required material parameters for optimized devices are discussed. Our investigations on technology, structural quality, electrical characteristics and photoexcited carrier dynamics show that beryllium doped LT-GaAs meets all these requirements. In addition, doping with Be provides more flexibility in tuning material characteristics of low-temperature grown GaAs, which is a considerable advantage in device fabrication

Keywords

III-V semiconductors; beryllium; crystal structure; electrical conductivity; gallium arsenide; photoelectric devices; reviews; semiconductor doping; Be-doped low-temperature grown GaAs; GaAs:Be; beryllium doped LT-GaAs; electrical characteristics; low-temperature grown GaAs; material parameters; optimized devices; photoexcited carrier dynamics; review; structural quality; ultrafast optoelectronic devices; ultrafast optoelectronics devices; Gallium arsenide; High speed optical techniques; Optical attenuators; Optical device fabrication; Optical devices; Optical materials; Optical scattering; Optoelectronic devices; Semiconductor materials; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939204

Filename

939204