Separation of electron and hole dynamics in low-temperature grown GaAs

Author

Haiml, M. ; Siegner, U. ; Morier-Genoud, F. ; Gebauer, J. ; Specht, P. ; Weber, E.R. ; Keller, U.

Author_Institution

Inst. for Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

2000

fDate

2000

Firstpage

97

Lastpage

100

Abstract

Electron and hole recombination in beryllium doped low-temperature grown GaAs is investigated by two-color pump-probe experiments. Depending on the charge state of the arsenic antisite defects, a 0.9 eV sub-bandgap pump pulse selectively promotes electrons or holes to the conduction or valence band, respectively. The doping level and growth temperature determine the charge state. Holes from singly ionized antisites recombine within a few ps. Recombination of holes from doubly ionized antisites and of electrons from neutral antisites takes place on a 100 ps time scale. Most likely, electrons from neutral antisites are captured by a different type of defect and slowly recombine afterwards

Keywords

III-V semiconductors; antisite defects; beryllium; conduction bands; defect states; electron-hole recombination; gallium arsenide; valence bands; 0.9 eV; 100 ps; GaAs:Be; arsenic antisite defects; beryllium doped low-temperature grown GaAs; charge state; conduction band; doping level; doubly ionized antisites; electron-hole dynamics; electron-hole recombination; growth temperature; low-temperature grown GaAs; neutral antisites; singly ionized antisites; sub-bandgap pump pulse; two-color pump-probe experiments; valence band; Absorption; Charge carrier processes; Doping; Electrons; Gallium arsenide; Materials science and technology; Nonlinear optics; Radiative recombination; Spontaneous emission; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939205

Filename

939205