Title :
Characterisation of indium phosphide using terahertz radiation
Author :
Causley, R.L. ; Lewis, R.A.
Author_Institution :
Inst. for Supercond. & Electron. Mater., Wollongong Univ., NSW, Australia
Abstract :
Specimens of undoped, n-type and p-type bulk InP have been investigated using THz radiation. Reflection spectroscopy permits the determination of the TO and LO phonon energies as well as the carrier concentration. Absorption spectroscopy reveals transitions between impurity states. We report the first absorption spectrum of an acceptor in InP. The transition energies agree well with electronic Raman scattering and photoluminescence data
Keywords :
III-V semiconductors; carrier density; impurity absorption spectra; impurity states; indium compounds; infrared spectra; phonon spectra; reflectivity; InP; LO phonon energies; THz radiation; TO phonon energies; absorption spectroscopy; acceptor; carrier concentration; electronic Raman scattering; impurity states; indium phosphide; n-type; p-type; photoluminescence; reflection spectroscopy; terahertz radiation; transition energies; undoped bulk InP; Damping; Indium phosphide; Optical reflection; Phonons; Plasma temperature; Reflectivity; Spectroscopy; Superconducting materials; Temperature measurement; Zinc;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939206
