Title :
Mound formation during GaAs(001) homoepitaxy at low substrate temperatures
Author :
Apostolopoulos, G. ; Herfort, J. ; Däweritz, L. ; Ploog, K.H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
Abstract :
The mound formation during homoepitaxy on GaAs(001) is studied as a function of temperature and As4:Ga flux ratio by means of atomic force microscopy. The results are compared to numerical growth simulations and the activation energy for surface diffusion and the Ehrlich-Schwoebel barrier height are estimated. The observed behavior is attributed to excess As condensing on the surface, which acts as a surfactant
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; surface diffusion; surfactants; As4:Ga flux ratio; Ehrlich-Schwoebel barrier height; GaAs; GaAs(001) homoepitaxy; activation energy; atomic force microscopy; excess As; low substrate temperatures; mound formation; numerical growth simulations; surface diffusion; surfactant; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Inorganic materials; Molecular beam epitaxial growth; Numerical simulation; Substrates; Surface morphology; Temperature distribution; Temperature measurement;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939207
