Title :
Enhanced intermixing in anion and cation sublattices of low-temperature grown GaAs
Author :
Chaldyshev, V.V. ; Bert, N.A. ; Musikhin, Yu.G. ; Suvorova, A.A. ; Preobrazhenskii, V.V. ; Putyato, M.A. ; Semyagin, B.R. ; Werner, Philipp
Author_Institution :
Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
Abstract :
Compositional intermixing was studied by transmission electron microscopy of low-temperature (LT) grown GaAs films delta-doped with isovalent In and Sb impurities. The diffusion was found to be enhanced on both anion and cation sublattices of LT GaAs when compared to that for conventional stoichiometric material. The phenomenon seems to be a result of high concentration of excess-arsenic-related point defects. These are gallium vacancies mediating diffusion on gallium sublattice and arsenic interstitials assisting diffusion on arsenic sublattice. The effective In-Ga and Sb-As interdiffusion coefficients and their activation energies have been determined
Keywords :
III-V semiconductors; chemical interdiffusion; gallium arsenide; interstitials; semiconductor doping; semiconductor superlattices; semiconductor thin films; transmission electron microscopy; vacancies (crystal); GaAs:In; GaAs:Sb; activation energies; anion sublattices; arsenic interstitials; cation sublattices; compositional intermixing; delta-doped films; diffusion; enhanced intermixing; excess-arsenic-related point defects; gallium vacancies; interdiffusion coefficients; low-temperature grown GaAs; transmission electron microscopy; Annealing; Crystallization; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Optical films; Substrates; Superlattices; Temperature; Transmission electron microscopy;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939210
