Title :
Influence of growth rate on MBE surface phase diagrams
Author :
Kaniewska, M. ; Klima, K. ; Reginski, K.
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
Static and dynamic surface phase diagrams for boundaries between the reconstructions (2×4)⇔(3×1) and (3×1)⇔(4×2) in (001) GaAs have been studied in detail. The surface phase diagrams, investigated for the purpose of practical application, show the influence of varying the growth rate. This for the first time has been interpreted as resulting from the presence of Ga droplets. This interpretation is consistent with a model indicating that surface Ga clusters play a key role in MBE growth
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; phase diagrams; semiconductor growth; surface phase transformations; surface reconstruction; (001) GaAs; Ga droplets; GaAs; MBE surface phase diagrams; growth rate; model; surface Ga clusters; surface reconstructions; Electrons; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Optical reflection; Semiconductor process modeling; Substrates; Surface morphology; Surface reconstruction; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939212
