DocumentCode
3319726
Title
Influence of growth rate on MBE surface phase diagrams
Author
Kaniewska, M. ; Klima, K. ; Reginski, K.
Author_Institution
Inst. of Electron Technol., Warsaw, Poland
fYear
2000
fDate
2000
Firstpage
129
Lastpage
132
Abstract
Static and dynamic surface phase diagrams for boundaries between the reconstructions (2×4)⇔(3×1) and (3×1)⇔(4×2) in (001) GaAs have been studied in detail. The surface phase diagrams, investigated for the purpose of practical application, show the influence of varying the growth rate. This for the first time has been interpreted as resulting from the presence of Ga droplets. This interpretation is consistent with a model indicating that surface Ga clusters play a key role in MBE growth
Keywords
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; phase diagrams; semiconductor growth; surface phase transformations; surface reconstruction; (001) GaAs; Ga droplets; GaAs; MBE surface phase diagrams; growth rate; model; surface Ga clusters; surface reconstructions; Electrons; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Optical reflection; Semiconductor process modeling; Substrates; Surface morphology; Surface reconstruction; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939212
Filename
939212
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