Temperature dependence of DC and microwave characteristics of InGaAs/InP composite channel HEMTs

Author

Liu, Y. ; Wang, H. ; Radhakrishnan, K. ; Ng, G.I. ; Xiong, Yong Zhong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2005

fDate

30 Nov.-2 Dec. 2005

Firstpage

207

Lastpage

210

Abstract

Submicron high electron mobility transistors (HEMTs) lattice-matched to InP with InGaAs/InP composite channel were fabricated. Temperature dependence of DC and RF characteristics of the HEMTs were studied in the temperature range from 20 to 100 °C. It has been found that the DC and microwave characteristics of the composite channel HEMTs are insensitive to the temperature. In particular, an increase in the maximum frequency of oscillation (f_max) was observed at elevated temperature. The InP HEMTs with an InGaAs/InP composite channel shown good thermal stability. The device may have great potential to be operated with a wide temperature range for microwave applications.

Keywords

III-V semiconductors; composite materials; gallium arsenide; high electron mobility transistors; indium compounds; microwave transistors; thermal stability; 20 to 100 degC; InGaAs-InP; composite channel HEMT; composite channel fabrication; high electron mobility transistors; microwave characteristics; oscillation maximum frequency; temperature dependence; thermal stability; Degradation; Electron mobility; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Microelectronics; Microwave devices; Radio frequency; Temperature dependence; HEMT; InP; Microwave characteristics; composite channel; temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on

Print_ISBN

0-7803-9372-4

Type

conf

DOI

10.1109/RFIT.2005.1598912

Filename

1598912