Title :
Spectral properties of angled-grating high-power semiconductor lasers
Author :
Sarangan, Andrew M. ; Wright, Malcolm ; Marciante, John R. ; Bossert, David J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
The beam quality in high-power semiconductor lasers are generally limited by filamentation and weak lateral mode control. The use of grating has recently been explored in a variety of ways. The α-DFB laser in particular has been demonstrated to have diffraction limited beam qualities and high power levels. The optical cavity of the α-DFB laser is shaped like a parallelogram several hundred microns wide by a few millimeters long. A wide stripe of grating is etched along the length of the cavity and oriented at an angle to the facets
Keywords :
diffraction gratings; distributed feedback lasers; laser beams; semiconductor lasers; α-DFB laser; 980 nm; angled-grating high-power semiconductor lasers; beam quality; diffraction limited beam qualities; etched; filamentation; high power levels; high-power semiconductor lasers; optical cavity; spectral properties; weak lateral mode control; Diffraction; Distributed feedback devices; Gratings; Laser beams; Laser feedback; Laser modes; Optical materials; Pulse modulation; Semiconductor lasers; Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737871
