Title :
Measurement of the damage profile of ion-implanted GaAs using an optical method
Author :
Gal, M. ; Wengler, M.C. ; Ilyas, S. ; Rofii, I. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
We describe an easy-to-use, computer controlled, optical method, based on differential reflectance, capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si implanted GaAs. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95)
Keywords :
III-V semiconductors; gallium arsenide; ion beam effects; ion implantation; reflectivity; semiconductor doping; silicon; vacancies (crystal); GaAs:Si; Si implanted GaAs; TRIM95; computer controlled optical method; damage profile; differential reflectance; ion-implanted GaAs; ion-implanted semiconductors; total vacancy profiles; transport of ions in matter; Chemicals; Energy measurement; Etching; Gallium arsenide; Optical computing; Optical control; Optical modulation; Optical sensors; Particle beam optics; Reflectivity;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939216
