Title :
Improved near- and far-field distributions in broad area semiconductor lasers with enhanced current spreading
Author :
O´Brien, P.A. ; Skovgaard, P.M.W. ; McInerney, J.G. ; Roberts, J.S.
Author_Institution :
Dept. of Phys., Univ. Coll. Cork, Ireland
Abstract :
We have demonstrated a novel semiconductor laser design with enhanced lateral current spreading. This results in significantly improved near and far-field distributions when compared to a standard broad area laser with a similar FWHM near-field. The far-field at a total output power of 0.6 W is single lobed, symmetric, and less than 60 percent narrower than the standard device
Keywords :
laser beams; quantum well lasers; symmetry; FWHM near-field; broad area semiconductor lasers; enhanced current spreading; far-field distributions; lobed; near-field distributions; semiconductor laser design; standard broad area laser; symmetric; total output power; Current distribution; Educational institutions; Laser modes; Power engineering and energy; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Smoothing methods; Spatial coherence;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737872
