DocumentCode :
3319802
Title :
Enhanced high-speed photoresponse by diffusion of iron into undoped semi-insulating GaAs
Author :
Ohsawa, Jun ; Ozaki, Yasutaka
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
fYear :
2000
fDate :
2000
Firstpage :
159
Lastpage :
162
Abstract :
Responses to picosecond light pulses have been compared on undoped liquid encapsulated Czochralski (LEC) semi-insulating wafers with and without iron doping. A large photocurrent, especially at the leading edge, for the iron-doped sample is expected because of increased hole capturing by the deep acceptors of iron, as well as decreased electron capturing caused by a concomitant decrease of deep donors such as EL2 and EL6. This was confirmed by the photocurrent decay at higher excitation, which is dominated by electrons in iron doped case, in contrast to holes in the undoped case
Keywords :
III-V semiconductors; diffusion; gallium arsenide; high-speed optical techniques; hole traps; impurity states; iron; photoconductivity; EL2; EL6; Fe diffusion; GaAs; GaAs:Fe; concomitant deep donors; decreased electron capture; deep acceptors; enhanced high-speed photoresponse; hole capture; photocurrent; photocurrent decay; picosecond light pulses; undoped liquid encapsulated Czochralski semi-insulating wafers; undoped semi-insulating GaAs; Charge carrier lifetime; Charge carrier processes; Conductivity; Doping; Electrodes; Gallium arsenide; Iron; Photoconductivity; Pulse measurements; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
Type :
conf
DOI :
10.1109/SIM.2000.939218
Filename :
939218
Link To Document :
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