Semi-insulating epitaxial layers for optoelectronic devices

Semi-insulating epitaxial layers of InP:Fe, GaAs:Fe and GaInP:Fe have been grown. To avoid the often observed inter-diffusion between Fe and Zn, two remedies are proposed using InP:Fe/InP:Zn as an example. One is co-doping InP with sulphur and iron and the other is to use ruthenium instead of iron. In situ mesa etching can also hinder side wall stimulated diffusion. Epitaxial lateral overgrowth studies of InP on a masked surface indicate promising feasibility of integrating SI InP on silicon. InP:Fe and GaInP:Fe/GaAs are found to be useful in the buried heterostructure laser fabrication. Buried in-plane lasers have shown very good thermal and high modulation properties. Buried vertical cavity surface emitting lasers can be pumped up to 97°C under continuous operation