Title :
High quality and thick GaN substrate epitaxially grown by VPE lateral overgrowth
Author_Institution :
Optoelectron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We have developed the epitaxial lateral overgrowth (ELO) technique for growing high-quality bulk GaN by using hybrid vapour phase epitaxial growth (HVPE). A remarkable reduction of dislocation density was achieved. The preparation of free-standing GaN wafers was demonstrated
Keywords :
III-V semiconductors; dislocation density; gallium compounds; optical films; vapour phase epitaxial growth; GaN; VPE lateral overgrowth; dislocation density; epitaxial lateral overgrowth; epitaxially grown; free-standing GaN wafers; high-quality bulk GaN; hybrid vapour phase epitaxial growth; thick GaN substrate; Crystalline materials; Diode lasers; Etching; Frequency; Gallium nitride; III-V semiconductor materials; Light emitting diodes; National electric code; Optical materials; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737880
