Etching for GaN laser facets and material characterization

Author

Adesida, I. ; Youtsey, C. ; Ping, A.T. ; Khan, F. ; Romano, L.T. ; Bulman, G.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

364

Abstract

The ability to remove or etch surface materials is a fundamental device processing step, and as an example, this is required to obtain mesa stripes in laser diode fabrication. In addition, etching can be utilized to realize laser facets as an alternative to cleaving. This is particularly important for GaN-based laser diodes. We will describe and present results on the wide range of dry and wet etching techniques that have been developed for GaN-based materials over the last few years

Keywords

III-V semiconductors; etching; gallium compounds; optical fabrication; semiconductor lasers; GaN; GaN laser facet etching; GaN-based laser diodes; GaN-based materials; cleaving; dry etching techniques; fundamental device processing step; laser diode fabrication; laser material characterization; mesa stripes; wet etching technique; Anisotropic magnetoresistance; Chemicals; Diode lasers; Dry etching; Electron beams; Gallium nitride; Optical films; Optical materials; Plasma chemistry; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737881

Filename

737881