On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication

Author

Korytar, D. ; Ferrari, C. ; Surma, B. ; Strzelecka, S. ; Dubecky, F. ; Huran, J. ; Fornari, R. ; Pekarek, L. ; Prochazkova, O. ; Smatko, V. ; Hruban, A.

Author_Institution

Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia

fYear

2000

fDate

2000

Firstpage

183

Lastpage

186

Abstract

Semi-insulating (SI) InP substrates from various producers have been studied by the Hall technique, X-ray diffraction, laser scattering tomography and photoluminescence. The detection performances of radiation detectors fabricated from selected materials were tested using a 60 keV photon source (²⁴¹Am). High Hall mobility, low dislocation and precipitation density have been observed in the substrate with low Fe content, which also gave the best detector performances. Its SI properties seem to be controlled by native defects

Keywords

Hall mobility; II-VI semiconductors; X-ray detection; X-ray diffraction; dislocation density; gamma-ray detection; indium compounds; iron; optical tomography; photoluminescence; precipitation; zinc; 60 keV; Am; Hall mobility; InP; InP:Fe,Zn; X-ray diffraction; bulk semi-insulating InP; crystal defects; dislocation density; laser scattering tomography; low Fe content; photoluminescence; precipitation density; radiation detector fabrication; radiation detector performance; Electromagnetic scattering; Indium phosphide; Laser theory; Particle scattering; Photonic crystals; Radiation detectors; Tomography; X-ray diffraction; X-ray lasers; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939223

Filename

939223