Title :
Visible-blind GaN PIN photodiodes
Author :
Smith, G.M. ; Boutros, K.S. ; Phanse, V.M. ; Chriss, M.F. ; Tamweber, F.D.
Author_Institution :
Epitronics/ATMI, Danbury, CT, USA
Abstract :
The uniqueness of the nitrides for detectors lies in their wide bandgaps that can be tailored by varying the composition of the quaternary alloy AlInGaN. We report on the performance of GaN PIN photodiodes grown by MOVPE with various intrinsic region thicknesses
Keywords :
III-V semiconductors; MOCVD; gallium compounds; optical fabrication; p-i-n photodiodes; photodetectors; vapour phase epitaxial growth; AlInGaN; GaN; GaN PIN photodiodes; MOVPE growth; intrinsic region thicknesses; nitride detectors; quaternary alloy AlInGaN; visible-blind GaN PIN photodiodes; wide bandgaps; Dark current; Epitaxial growth; Epitaxial layers; Etching; Gallium nitride; Infrared detectors; Infrared sensors; PIN photodiodes; Photonic band gap; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737882
