Furthering the understanding of quantum well intermixing in InP

Author

Haysom, Joan E. ; Piva, P.G. ; Poole, P.J. ; Aers, G.C. ; Raymond, S. ; Chen, Huajie ; Feenstra, R.M. ; Charbonneau, S. ; Mitchell, I.V.

Author_Institution

Dept. of Phys., Ottawa Univ., Ont., Canada

fYear

2000

fDate

2000

Firstpage

197

Lastpage

204

Abstract

Quantum well intermixing can be accomplished via the introduction of excess defects. We review key concepts and parameters required in order to understand the physics of the technique. We show that in the cases of ion implantation and low temperature (LT) epitaxy in InP, the intermixing-causing defect is highly mobile. In both cases the interdiffusion of the group-V sublattice is greater than the group-III sublattice, resulting in strain development and a reduced splitting between the heavy hole and light hole transitions. Using additional characterization of LT InP, we propose that the mobile defect is a P interstitial

Keywords

III-V semiconductors; diffusion; indium compounds; internal stresses; interstitials; ion implantation; semiconductor quantum wells; InP; P interstitial; excess defect introduction; heavy hole-light hole transition reduced splitting; interdiffusion; intermixing-causing defect; ion implantation; low temperature epitaxy; mobile defect; quantum well intermixing; strain development; Astronomy; Capacitive sensors; Councils; Indium phosphide; Ion implantation; Lattices; Optical buffering; Physics; Rapid thermal annealing; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939226

Filename

939226