Title :
Study of optical and electrical properties of GaSb/AlxGa 1-xSb grown by MOCVD
Author :
Ramelan, A.H. ; Drozdowicz-Tomsia, K. ; Goldys, E.M. ; Tansley, T.L.
Author_Institution :
Semicond. Sci. & Technol. Labs., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
We report the metalorganic chemical vapour deposition (MOCVD) growth conditions and properties of GaSb and AlxGa1-x Sb in the regime x⩽0.25, including the effect of V/III ratio and growth temperature on electrical and optical properties. GaSb and Al xGa1-xSb compound layers were grown on GaAs substrate using TMAl, TMGa and TMSb precursors. Growth temperatures in the range of 520°C to 680°C and V/III ratios between 1 to 5 have been investigated
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; hole density; hole mobility; photoluminescence; semiconductor growth; semiconductor heterojunctions; stoichiometry; vapour phase epitaxial growth; 520 to 680 C; GaAs substrate; GaSb-AlGaSb; GaSb/AlxGa1-xSb; MOCVD; PL; TMAl; TMGa; TMSb precursors; V/III ratio; electrical properties; growth temperature; hole density; metalorganic chemical vapour deposition; mobility; optical properties; Australia; Chemical technology; Chemical vapor deposition; Epitaxial growth; High speed optical techniques; III-V semiconductor materials; Laboratories; MOCVD; Molecular beam epitaxial growth; Optical materials;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939228
