• DocumentCode
    3319993
  • Title

    Influence of the deposition conditions on the properties of TiO2 -Ge nanocomposite films synthesized by magnetron co-sputtering

  • Author

    Slav, A. ; Stan, G.E. ; Galca, A.C.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Ilfov, Romania
  • Volume
    02
  • fYear
    2010
  • fDate
    11-13 Oct. 2010
  • Firstpage
    337
  • Lastpage
    340
  • Abstract
    A growing need for eco-friendly energy sources have led recently to a frantic search of new compositional systems for photovoltaic applications. The nanocomposite titania-germanium (TiO2-Ge) systems represent a new viable family of optoelectronic materials. Their structural, optical and electronic properties can be easily tailored by customizing the density and size of Ge dots in the TiO2 matrix. Early studies on TiO2-Ge nanocomposites have shown promises for their use as an alternative in photovoltaic applications. In this study we report the TiO2-Ge films synthesis by reactive magnetron co-sputtering. Their properties were evaluated by compositional (EDS), structural (XRD, FTIR) and optical (UV-Vis) characterizations.
  • Keywords
    Fourier transform spectra; X-ray chemical analysis; X-ray diffraction; elemental semiconductors; germanium; infrared spectra; nanocomposites; nanofabrication; semiconductor growth; semiconductor quantum dots; semiconductor thin films; sputter deposition; titanium compounds; ultraviolet spectra; visible spectra; EDS; FTIR; TiO2-Ge; UV-Vis spectra; XRD; deposition conditions; dot density; dot size; ecofriendly energy sources; electronic properties; nanocomposite films; optical properties; optoelectronic materials; photovoltaic applications; reactive magnetron cosputtering; structural properties; Annealing; Magnetosphere; Optical films; Photonic band gap; Sputtering; X-ray scattering; TiO2-Ge; UV-Vis; XRD; magnetron sputtering; photovoltaic application;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2010 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-5783-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2010.5650691
  • Filename
    5650691