DocumentCode :
3319993
Title :
Influence of the deposition conditions on the properties of TiO2 -Ge nanocomposite films synthesized by magnetron co-sputtering
Author :
Slav, A. ; Stan, G.E. ; Galca, A.C.
Author_Institution :
Nat. Inst. of Mater. Phys., Ilfov, Romania
Volume :
02
fYear :
2010
fDate :
11-13 Oct. 2010
Firstpage :
337
Lastpage :
340
Abstract :
A growing need for eco-friendly energy sources have led recently to a frantic search of new compositional systems for photovoltaic applications. The nanocomposite titania-germanium (TiO2-Ge) systems represent a new viable family of optoelectronic materials. Their structural, optical and electronic properties can be easily tailored by customizing the density and size of Ge dots in the TiO2 matrix. Early studies on TiO2-Ge nanocomposites have shown promises for their use as an alternative in photovoltaic applications. In this study we report the TiO2-Ge films synthesis by reactive magnetron co-sputtering. Their properties were evaluated by compositional (EDS), structural (XRD, FTIR) and optical (UV-Vis) characterizations.
Keywords :
Fourier transform spectra; X-ray chemical analysis; X-ray diffraction; elemental semiconductors; germanium; infrared spectra; nanocomposites; nanofabrication; semiconductor growth; semiconductor quantum dots; semiconductor thin films; sputter deposition; titanium compounds; ultraviolet spectra; visible spectra; EDS; FTIR; TiO2-Ge; UV-Vis spectra; XRD; deposition conditions; dot density; dot size; ecofriendly energy sources; electronic properties; nanocomposite films; optical properties; optoelectronic materials; photovoltaic applications; reactive magnetron cosputtering; structural properties; Annealing; Magnetosphere; Optical films; Photonic band gap; Sputtering; X-ray scattering; TiO2-Ge; UV-Vis; XRD; magnetron sputtering; photovoltaic application;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-5783-0
Type :
conf
DOI :
10.1109/SMICND.2010.5650691
Filename :
5650691
Link To Document :
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