Title :
Interfacial coherence and lateral indium segregation in thick InGaAs single heterostructures grown on GaAs substrates
Author :
Absin, R. ; Madebo, M. ; Warminski, T. ; Usher, B.
Author_Institution :
Dept. of Electron. Eng., La Trobe Univ., Bundoora, Vic., Australia
Abstract :
Interfacial coherence in low-strained InxGa1-x As grown on GaAs substrates has been studied and the critical strains corresponding to layer thicknesses of 0.5, 1.0, and 2.0 μm have been determined. The measured critical strains exceeded those expected from current theoretical models and the discrepancy could not be accounted for by including additional dislocation pinning due to either a Peierls force or a dislocation atmosphere. A new model of Lateral Indium Segregation (LIS) in the vicinity of a grown-in threading dislocation is proposed as an alternative explanation of our observations
Keywords :
III-V semiconductors; dislocation pinning; gallium arsenide; indium compounds; interface structure; internal stresses; semiconductor heterojunctions; surface segregation; 0.5 mum; 1 mum; 2 mum; GaAs; GaAs substrates; InxGa1-xAs; InGaAs-GaAs; Peierls force; critical strains; dislocation atmosphere; dislocation pinning; grown-in threading dislocation; interfacial coherence; lateral indium segregation; layer thickness; thick InGaAs single heterostructures; Atmosphere; Atmospheric measurements; Atmospheric modeling; Capacitive sensors; Coherence; Current measurement; Force measurement; Gallium arsenide; Indium; Strain measurement;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939235
