DocumentCode
3320051
Title
High speed electrical performance comparison between bump with RDL and wire bond technologies
Author
Chiu, Chi-Tsung ; Wu, Sung-Mao ; Hung, Chi-Ping
Author_Institution
Adv. Semicond. Eng. Inc., Kaohsiung, Taiwan
fYear
2002
fDate
4-6 Dec. 2002
Firstpage
83
Lastpage
88
Abstract
As the chip clock rate keeps increasing, the electrical performance of wire bond and bump connections which are using in advanced packaging is becoming the important consideration while choosing the package solution for high-speed devices. In this paper, the electrical performance of wire bond technology and bump with RDL (redistribution layer) technology is presented. By using full-wave 3D electromagnetic simulators, the experimental results, including the passive parasitic parameter analysis (AC resistance, inductance and capacitance) and scattering parameter analysis are presented. Discussions on the rise time, cross talk noise, and propagation delay for a 10 Gbit/s signal are also included.
Keywords
S-parameters; circuit simulation; computational electromagnetics; integrated circuit interconnections; integrated circuit modelling; integrated circuit packaging; lead bonding; 10 Gbit/s; AC resistance; S-parameter analysis; bump connection redistribution layer; bump with RDL; capacitance; cross talk noise; full-wave 3D electromagnetic simulation; high speed electrical performance; inductance; passive parasitic parameter analysis; propagation delay; rise time; wire bond technology; Analytical models; Bonding; Clocks; Electric resistance; Electromagnetic analysis; Electromagnetic induction; Electromagnetic scattering; Inductance; Packaging; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Materials and Packaging, 2002. Proceedings of the 4th International Symposium on
Print_ISBN
0-7803-7682-X
Type
conf
DOI
10.1109/EMAP.2002.1188817
Filename
1188817
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