• DocumentCode
    3320051
  • Title

    High speed electrical performance comparison between bump with RDL and wire bond technologies

  • Author

    Chiu, Chi-Tsung ; Wu, Sung-Mao ; Hung, Chi-Ping

  • Author_Institution
    Adv. Semicond. Eng. Inc., Kaohsiung, Taiwan
  • fYear
    2002
  • fDate
    4-6 Dec. 2002
  • Firstpage
    83
  • Lastpage
    88
  • Abstract
    As the chip clock rate keeps increasing, the electrical performance of wire bond and bump connections which are using in advanced packaging is becoming the important consideration while choosing the package solution for high-speed devices. In this paper, the electrical performance of wire bond technology and bump with RDL (redistribution layer) technology is presented. By using full-wave 3D electromagnetic simulators, the experimental results, including the passive parasitic parameter analysis (AC resistance, inductance and capacitance) and scattering parameter analysis are presented. Discussions on the rise time, cross talk noise, and propagation delay for a 10 Gbit/s signal are also included.
  • Keywords
    S-parameters; circuit simulation; computational electromagnetics; integrated circuit interconnections; integrated circuit modelling; integrated circuit packaging; lead bonding; 10 Gbit/s; AC resistance; S-parameter analysis; bump connection redistribution layer; bump with RDL; capacitance; cross talk noise; full-wave 3D electromagnetic simulation; high speed electrical performance; inductance; passive parasitic parameter analysis; propagation delay; rise time; wire bond technology; Analytical models; Bonding; Clocks; Electric resistance; Electromagnetic analysis; Electromagnetic induction; Electromagnetic scattering; Inductance; Packaging; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Materials and Packaging, 2002. Proceedings of the 4th International Symposium on
  • Print_ISBN
    0-7803-7682-X
  • Type

    conf

  • DOI
    10.1109/EMAP.2002.1188817
  • Filename
    1188817