Title :
LF noise and reliability of Gunn diodes
Author :
Zaklikiewicz, A.M.
Author_Institution :
Inst. of Electron. Technol., Warsaw
Abstract :
On the basis of these investigations it possible to state the following: there is a strong relation between LF noise level and diode technology quality; the relation between LF noise and reliability can be considered mainly as a statistical problem, but for worse technologies the quantity of the test sample may be relatively small; the noise measurement with the aim of reliability estimation is not recommended in the case of commercial semiconductor devices made with the use of high quality technologies, but it is recommended in the case of special and military applications (it is also recommended for new technology preparation); and not only noise level but also noise level changes during initial time of work can be considered as the reliability indicator
Keywords :
Gunn diodes; electric noise measurement; microwave measurement; semiconductor device measurement; semiconductor device noise; semiconductor device reliability; Gunn diodes; LF noise; diode technology quality; military applications; noise measurement; reliability indicator; Current measurement; Electrical resistance measurement; Frequency measurement; Gunn devices; Noise level; Noise measurement; Power generation; Semiconductor device noise; Semiconductor diodes; Temperature;
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.737923