DocumentCode
332013
Title
C-band high power PIN diode switch
Author
Czwartacka, A. ; Stachowski, B.
Author_Institution
Telecommun. Res. Inst., Warsaw, Poland
fYear
1998
fDate
20-22 May 1998
Firstpage
93
Abstract
A C-band PIN diode switch for a high power T/R module is presented in the paper. The electrical and mechanical design of the PIN diode switch with compensation of the parasitic series inductance of the diodes is described. This compensation allows us to achieve an isolation of more than 40 dB with use of only one pair of PIN diodes
Keywords
compensation; inductance; microwave switches; p-i-n diodes; power semiconductor diodes; power semiconductor switches; transceivers; C-band PIN diode switch; compensation; electrical design; high power PIN diode switch; high power T/R module; isolation; mechanical design; parasitic series inductance; Circuits; Diodes; Inductance; Multichip modules; Packaging; Power transmission lines; Radio frequency; Shunt (electrical); Signal design; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location
Krakow
Print_ISBN
83-906662-0-0
Type
conf
DOI
10.1109/MIKON.1998.737926
Filename
737926
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