DocumentCode :
332013
Title :
C-band high power PIN diode switch
Author :
Czwartacka, A. ; Stachowski, B.
Author_Institution :
Telecommun. Res. Inst., Warsaw, Poland
fYear :
1998
fDate :
20-22 May 1998
Firstpage :
93
Abstract :
A C-band PIN diode switch for a high power T/R module is presented in the paper. The electrical and mechanical design of the PIN diode switch with compensation of the parasitic series inductance of the diodes is described. This compensation allows us to achieve an isolation of more than 40 dB with use of only one pair of PIN diodes
Keywords :
compensation; inductance; microwave switches; p-i-n diodes; power semiconductor diodes; power semiconductor switches; transceivers; C-band PIN diode switch; compensation; electrical design; high power PIN diode switch; high power T/R module; isolation; mechanical design; parasitic series inductance; Circuits; Diodes; Inductance; Multichip modules; Packaging; Power transmission lines; Radio frequency; Shunt (electrical); Signal design; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
Type :
conf
DOI :
10.1109/MIKON.1998.737926
Filename :
737926
Link To Document :
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