Surface and bulk properties of GaAs (001) treated by Mg layers

Author

Feng, P.X. ; Leckery, R.C.G. ; Riley, J.D. ; Pigram, P.J. ; Hollering, M. ; Ley, L.

Author_Institution

Dept. of Phys., La Trobe Univ., Bundoora, Vic., Australia

fYear

2000

fDate

2000

Firstpage

264

Lastpage

267

Abstract

Photoelectron spectroscopy was used to investigate the interactions which occur when Mg is deposited onto a GaAs (001) surface. The Mg, Ga and As core lines were deconvoluted into components whose angle dependence and intensity variation with overlayer thickness was used to interpret the reactions and morphology. The deposition of Mg causes the appearance of new chemically shifted components in Ga and As. This is interpreted as showing that the Mg initially diffuses into the GaAs and replaces the Ga which diffuses towards the surface, Further Mg deposition causes more in-diffusion but also creates a Mg overlayer. Annealing the sample to 500°C causes the overlayer to desorb together with the disappearance of most of the Mg in the lattice from the sampled layer. Some Mg-As however remains

Keywords

III-V semiconductors; adsorption; annealing; chemical interdiffusion; gallium arsenide; magnesium; photoelectron spectra; surface diffusion; surface structure; thermally stimulated desorption; 500 C; GaAs; GaAs (001); GaAs (001) surface; Mg; Mg deposition; Mg layers; Mg overlayer; Mg-As; angle dependence; annealing; bulk properties; chemically shifted components; core lines; in-diffusion; intensity variation; morphology; overlayer desorption; overlayer thickness; photoelectron spectroscopy; surface properties; Annealing; Chemicals; Gallium arsenide; Lattices; Photoelectricity; Physics; Spectroscopy; Substrates; Surface morphology; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939240

Filename

939240