Title :
Low-temperature light emission in a forward-biased Schottky diode with a n-doped channel
Author :
Babinski, A. ; Witczak, P. ; Laborik, S. ; Twardowski, A.
Author_Institution :
Inst. of Experimental Phys., Warsaw Univ., Poland
Abstract :
Electroluminescence (EL) from a forward-biased Schottky diode on modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure grown by metalorganic vapor phase epitaxy is investigated in this work. Comparative study of the EL and the photoluminescence (PL) at low temperature is presented. Linear current dependence and a nonmonotonic temperature dependence of the EL intensity with a maximum around T=60 K were observed. We propose that hole injection from the Schottky gate is responsible for the optical recombination within the InGaAs channel of our structure
Keywords :
III-V semiconductors; MOCVD coatings; Schottky diodes; aluminium compounds; charge injection; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; photoluminescence; semiconductor epitaxial layers; silicon; spectral line intensity; 60 K; EL intensity; GaAs:Si-InGaAs-AlGaAs; InGaAs channel; Schottky gate; electroluminescence; forward-biased Schottky diode; hole injection; linear current dependence; low temperature; low-temperature light emission; metalorganic vapor phase epitaxy; modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure; n-doped channel; nonmonotonic temperature dependence; optical recombination; photoluminescence; Doping; Electroluminescence; Gallium arsenide; Indium gallium arsenide; Optical buffering; Photoluminescence; Physics; Radiative recombination; Schottky diodes; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939243
