Low-temperature light emission in a forward-biased Schottky diode with a n-doped channel

Author

Babinski, A. ; Witczak, P. ; Laborik, S. ; Twardowski, A.

Author_Institution

Inst. of Experimental Phys., Warsaw Univ., Poland

fYear

2000

fDate

2000

Firstpage

276

Lastpage

279

Abstract

Electroluminescence (EL) from a forward-biased Schottky diode on modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure grown by metalorganic vapor phase epitaxy is investigated in this work. Comparative study of the EL and the photoluminescence (PL) at low temperature is presented. Linear current dependence and a nonmonotonic temperature dependence of the EL intensity with a maximum around T=60 K were observed. We propose that hole injection from the Schottky gate is responsible for the optical recombination within the InGaAs channel of our structure

Keywords

III-V semiconductors; MOCVD coatings; Schottky diodes; aluminium compounds; charge injection; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; photoluminescence; semiconductor epitaxial layers; silicon; spectral line intensity; 60 K; EL intensity; GaAs:Si-InGaAs-AlGaAs; InGaAs channel; Schottky gate; electroluminescence; forward-biased Schottky diode; hole injection; linear current dependence; low temperature; low-temperature light emission; metalorganic vapor phase epitaxy; modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure; n-doped channel; nonmonotonic temperature dependence; optical recombination; photoluminescence; Doping; Electroluminescence; Gallium arsenide; Indium gallium arsenide; Optical buffering; Photoluminescence; Physics; Radiative recombination; Schottky diodes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939243

Filename

939243