Characterization of SiC thin films grown on Si by inductively coupled plasma chemical vapor deposition at low temperatures

Author

Young, Tai-Fa ; Hsiao, Chin-Lien ; Peng, Chia-Lin

fYear

2000

fDate

2000

Firstpage

291

Lastpage

294

Abstract

A SiC thin film has been grown on an Si(100) substrate by means of Inductively Coupled Plasma Chemical Vapor Deposition under experimental conditions of different growth temperatures, mass flow rates of SiH₄ and CH₄, and varied RF frequencies and powers. SiC samples were analyzed by FTIR EPMA and by TEM. We have achieved the growth of SiC crystalline thin films at 200°C with varying C/Si atomic ratios at a grain size of 1 μm and growth rate of 2 μm per hour using an RF frequency of 51.2 MHz and increased RF plasma power

Keywords

Fourier transform spectra; electron probe analysis; grain size; infrared spectra; plasma CVD; semiconductor growth; semiconductor thin films; silicon compounds; stoichiometry; transmission electron microscopy; wide band gap semiconductors; 1 mum; 51.2 MHz; C/Si atomic ratios; CH₄; EPMA; FTIR; RF frequencies; RF plasma power; Si; Si(100) substrate; SiC; SiC crystalline thin films; SiC thin films; SiH₄; TEM; grain size; growth rate; inductively coupled plasma chemical vapor deposition; low temperature; mass flow rate; Chemical vapor deposition; Crystallization; Grain size; Plasma chemistry; Plasma temperature; Radio frequency; Semiconductor thin films; Silicon carbide; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939245

Filename

939245