Title :
Characterization of SiC thin films grown on Si by inductively coupled plasma chemical vapor deposition at low temperatures
Author :
Young, Tai-Fa ; Hsiao, Chin-Lien ; Peng, Chia-Lin
Abstract :
A SiC thin film has been grown on an Si(100) substrate by means of Inductively Coupled Plasma Chemical Vapor Deposition under experimental conditions of different growth temperatures, mass flow rates of SiH4 and CH4, and varied RF frequencies and powers. SiC samples were analyzed by FTIR EPMA and by TEM. We have achieved the growth of SiC crystalline thin films at 200°C with varying C/Si atomic ratios at a grain size of 1 μm and growth rate of 2 μm per hour using an RF frequency of 51.2 MHz and increased RF plasma power
Keywords :
Fourier transform spectra; electron probe analysis; grain size; infrared spectra; plasma CVD; semiconductor growth; semiconductor thin films; silicon compounds; stoichiometry; transmission electron microscopy; wide band gap semiconductors; 1 mum; 51.2 MHz; C/Si atomic ratios; CH4; EPMA; FTIR; RF frequencies; RF plasma power; Si; Si(100) substrate; SiC; SiC crystalline thin films; SiC thin films; SiH4; TEM; grain size; growth rate; inductively coupled plasma chemical vapor deposition; low temperature; mass flow rate; Chemical vapor deposition; Crystallization; Grain size; Plasma chemistry; Plasma temperature; Radio frequency; Semiconductor thin films; Silicon carbide; Sputtering; Substrates;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939245
