Title :
Investigation of InGaAs p-i-n photodiode for optical-microwave mixing process
Author :
Piotrowski, Jerzy K. ; Galwas, Bogdan A. ; Malysev, S.A. ; Andrievski, Vatslav F.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
Abstract :
An InGaAs p-i-n photodiode, operating at 1.3 μm has been fabricated and used in an optical-microwave mixer configuration. The DC characteristics, diode capacitance for various incident optical power as well as frequency dependence of responsivity and reflection coefficient up to 3 GHz were investigated. Bias and local oscillator power level dependence of optical-microwave mixing process is reported and discussed
Keywords :
III-V semiconductors; capacitance; gallium arsenide; indium compounds; microwave mixers; microwave photonics; optical frequency conversion; optical receivers; p-i-n photodiodes; photodetectors; subcarrier multiplexing; 1.3 micron; 3 GHz; DC characteristics; InGaAs; InGaAs p-i-n photodiode; LO power level dependence; PIN photodiode; bias level dependence; diode capacitance; frequency dependence; incident optical power; local oscillator power level; optical-microwave mixing process; reflection coefficient; responsivity; High speed optical techniques; Indium gallium arsenide; Nonlinear optics; Optical feedback; Optical mixing; Optical receivers; Optical saturation; P-i-n diodes; PIN photodiodes; Voltage;
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.737941
