Title :
Switched LNAs using GaAs MMIC based RF MEMS switches
Author :
Malmqvist, R. ; Samuelsson, C. ; Smith, D. ; Vähä-Heikkilä, T. ; Baggen, R.
Author_Institution :
FOI Swedish Defence Res. Agency, Linköping, Sweden
Abstract :
In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here.
Keywords :
III-V semiconductors; MMIC amplifiers; circuit noise; gallium arsenide; low noise amplifiers; microswitches; GaAs; MMIC; P1dB compression point; RF MEMS switches; high-linearity RF MEMS switching network; in-band gain; low-loss RF MEMS switching network; noise figure; reconfigurable LNA front-end circuit; switched LNA; switched LNA hybrid circuit; Gallium arsenide; MMICs; Micromechanical devices; Microswitches; Radio frequency; Switching circuits; Low noise amplifiers; MMIC; radio frequency microelectromechanical systems; switches;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650706
