The microscopic Monte Carlo technique of the millimetre-wave unipolar devices simulation

Author

Yatskevich, Vital ; Muravjev, Valentin

Author_Institution

Byelorussian State Univ., Minsk, Byelorussia

fYear

1998

fDate

20-22 May 1998

Firstpage

226

Abstract

A new efficient method of the electron´s wave vector calculation after its ionised impurity scattering is discussed in this paper. The accent has been put on the fact that the electron scattering on ionised impurities plays an important role in hot carrier diffusion noise of the millimetre-wave devices based on the highly doped gallium arsenide. The characteristics of the GaAs millimetre-wave FETs with a quarter-micrometer gate were analysed

Keywords

III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; gallium arsenide; heavily doped semiconductors; hot carriers; impurity scattering; millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; 0.25 micron; EHF; GaAs MM-wave FET; MESFET; MM-wave unipolar device simulation; electron scattering; electron wave vector calculation; highly doped GaAs; hot carrier diffusion noise; ionised impurity scattering; microscopic Monte Carlo technique; millimetre-wave unipolar devices; quarter-micrometer gate; Electrons; Gallium arsenide; Hot carriers; Impurities; Microscopy; Monte Carlo methods; Noise generators; Particle scattering; Semiconductor device noise; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves and Radar, 1998. MIKON '98., 12th International Conference on

Conference_Location

Krakow

Print_ISBN

83-906662-0-0

Type

conf

DOI

10.1109/MIKON.1998.737952

Filename

737952