Title :
The microscopic Monte Carlo technique of the millimetre-wave unipolar devices simulation
Author :
Yatskevich, Vital ; Muravjev, Valentin
Author_Institution :
Byelorussian State Univ., Minsk, Byelorussia
Abstract :
A new efficient method of the electron´s wave vector calculation after its ionised impurity scattering is discussed in this paper. The accent has been put on the fact that the electron scattering on ionised impurities plays an important role in hot carrier diffusion noise of the millimetre-wave devices based on the highly doped gallium arsenide. The characteristics of the GaAs millimetre-wave FETs with a quarter-micrometer gate were analysed
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; gallium arsenide; heavily doped semiconductors; hot carriers; impurity scattering; millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; 0.25 micron; EHF; GaAs MM-wave FET; MESFET; MM-wave unipolar device simulation; electron scattering; electron wave vector calculation; highly doped GaAs; hot carrier diffusion noise; ionised impurity scattering; microscopic Monte Carlo technique; millimetre-wave unipolar devices; quarter-micrometer gate; Electrons; Gallium arsenide; Hot carriers; Impurities; Microscopy; Monte Carlo methods; Noise generators; Particle scattering; Semiconductor device noise; Semiconductor devices;
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.737952
