Title :
Impurity doping effects on grown-in defects in silicon
Author :
Tanahashi, K. ; Harada, H. ; Koukitsu, A. ; Inoue, N.
Author_Institution :
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
Abstract :
The threshold change of equilibrium concentration of vacancies for reported void defect density change due to substitutional B and Sb doping are estimated. Changing point defect concentration by more than 10% for either B or Sb changes the void density. Thus, the threshold impurity concentration for changing void density is predictable for various dopants. The mechanism of void density change by the change of vacancy equilibrium concentration is discussed
Keywords :
antimony; boron; doping profiles; elemental semiconductors; semiconductor doping; silicon; vacancies (crystal); voids (solid); Si:B; Si:Sb; grown-in defects; impurity doping effects; point defect concentration; substitutional B doping; substitutional Sb doping; threshold impurity concentration; vacancy equilibrium concentration; void defect density; Compressive stress; Doping; Electrons; Gallium arsenide; Impurities; Performance analysis; Semiconductor films; Silicon; Thermal stresses; Tin;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939249
