DocumentCode
3320299
Title
Impurity doping effects on grown-in defects in silicon
Author
Tanahashi, K. ; Harada, H. ; Koukitsu, A. ; Inoue, N.
Author_Institution
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
fYear
2000
fDate
2000
Firstpage
307
Lastpage
310
Abstract
The threshold change of equilibrium concentration of vacancies for reported void defect density change due to substitutional B and Sb doping are estimated. Changing point defect concentration by more than 10% for either B or Sb changes the void density. Thus, the threshold impurity concentration for changing void density is predictable for various dopants. The mechanism of void density change by the change of vacancy equilibrium concentration is discussed
Keywords
antimony; boron; doping profiles; elemental semiconductors; semiconductor doping; silicon; vacancies (crystal); voids (solid); Si:B; Si:Sb; grown-in defects; impurity doping effects; point defect concentration; substitutional B doping; substitutional Sb doping; threshold impurity concentration; vacancy equilibrium concentration; void defect density; Compressive stress; Doping; Electrons; Gallium arsenide; Impurities; Performance analysis; Semiconductor films; Silicon; Thermal stresses; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939249
Filename
939249
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