Title :
Numerical simulation of MM-wave TEDs using an improved energy and momentum balance electron transport model
Author :
Suchecka, Matgorzata
Author_Institution :
Inst. of Electron. Technol., Warszawa, Poland
Abstract :
An efficient method for the numerical simulation of MM-wave transferred electron devices in a frequency range around 40 GHz has been presented. The improved energy and momentum balance model (EMB) of electron transport has been applied to take into account the time-dependent phenomena appearing due to the non-stationary electron transport in the active region of a Gunn diode. The fundamental dependencies of the diode current on the carrier diffusion has been also incorporated
Keywords :
Gunn diodes; carrier lifetime; millimetre wave diodes; numerical analysis; semiconductor device models; 40 GHz; EHF; Gunn diode; MM-wave TEDs; active region; carrier diffusion; diode current; electron transport model; energy/momentum balance model; nonstationary electron transport; numerical simulation; time-dependent phenomena; transferred electron devices; Boltzmann equation; Current density; Electrons; Energy conservation; Frequency; Gunn devices; Numerical simulation; Poisson equations; Semiconductor diodes; Time domain analysis;
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.737956
