Dynamics of excitons in ZnMgSeTe layers and ZnTe/ZnMgSeTe quantum wells

Author

Dao, L.V. ; Makino, H. ; Chang, J.H. ; Yao, T. ; Gal, M.

Author_Institution

Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia

fYear

2000

fDate

2000

Firstpage

315

Lastpage

317

Abstract

We report on the measurement of time-resolved (TR) and time integrated (CW) photoluminescence (PL) of high quality ZnMgSeTe quaternary layers and ZnTe/ZnMgSeTe single quantum wells (SQW) grown on a ZnTe substrate. The CW-PL spectra of both samples show sharp exciton related peaks. From TR-PL measurements we were able to determine the exciton formation and trapping time which was found to be 12 ps at 10 K and 5 ps at 50 K. At low temperatures (10 K) the effective lifetime of the excitons was measured to be 280 ps in the quaternary layers and 430 ps in the SQW

Keywords

II-VI semiconductors; excitons; magnesium compounds; photoluminescence; radiative lifetimes; semiconductor epitaxial layers; semiconductor quantum wells; time resolved spectra; zinc compounds; 10 K; 12 ps; 280 ps; 430 ps; 5 ps; 50 K; CW-PL spectra; SQW; TR-PL measurements; ZnMgSeTe quaternary layers; ZnTe; ZnTe-ZnMgSeTe; ZnTe/ZnMgSeTe single quantum wells; exciton dynamics; exciton formation time; exciton lifetime; exciton peaks; exciton trapping time; time integrated photoluminescence; time-resolved photoluminescence; Excitons; Luminescence; Molecular beam epitaxial growth; Photoluminescence; Radiative recombination; Spectroscopy; Substrates; Temperature; Time measurement; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939251

Filename

939251