Title :
Loss mechanisms and switching performance analysis for efficient mm-Waves Class-E PAs
Author :
El-Aassar, Omar ; El-Nozahi, Mohamed ; Ragai, Hani F.
Author_Institution :
Electron. & Commun. Dept., Ain Shams Univ., Cairo, Egypt
Abstract :
In this paper, loss mechanisms of monolithic high frequency Class E PAs are studied. The switching behavior is analyzed to understand the discrepancy between common design equations and optimal design values as frequency scales up. Analytical results are verified by spice simulations. In addition, a design recipe is proposed for mm-Waves PAs. The design approach is adopted to compare different technology nodes including the 130 nm, 90 nm and 65 nm bulk CMOS. Newer technologies show better power added efficiency (PAE) only at the mm-Waves regime. Simulations show that the PAE is boosted from 31% to 40% when the proposed design methodology is applied at 60 GHz using the 65 nm node.
Keywords :
CMOS integrated circuits; field effect MIMIC; millimetre wave power amplifiers; bulk CMOS; common design equations; frequency 60 GHz; frequency scales; loss mechanisms; mm-vaves class-E PA; monolithic high frequency class E PA; optimal design values; power amplifier; size 130 nm; size 65 nm; size 90 nm; spice simulations; switching performance analysis; CMOS integrated circuits; Capacitance; Inductors; Mathematical model; Semiconductor device modeling; Switches; Switching circuits;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7168978
