Loss mechanisms and switching performance analysis for efficient mm-Waves Class-E PAs

Author

El-Aassar, Omar ; El-Nozahi, Mohamed ; Ragai, Hani F.

Author_Institution

Electron. & Commun. Dept., Ain Shams Univ., Cairo, Egypt

fYear

2015

fDate

24-27 May 2015

Firstpage

1694

Lastpage

1697

Abstract

In this paper, loss mechanisms of monolithic high frequency Class E PAs are studied. The switching behavior is analyzed to understand the discrepancy between common design equations and optimal design values as frequency scales up. Analytical results are verified by spice simulations. In addition, a design recipe is proposed for mm-Waves PAs. The design approach is adopted to compare different technology nodes including the 130 nm, 90 nm and 65 nm bulk CMOS. Newer technologies show better power added efficiency (PAE) only at the mm-Waves regime. Simulations show that the PAE is boosted from 31% to 40% when the proposed design methodology is applied at 60 GHz using the 65 nm node.

Keywords

CMOS integrated circuits; field effect MIMIC; millimetre wave power amplifiers; bulk CMOS; common design equations; frequency 60 GHz; frequency scales; loss mechanisms; mm-vaves class-E PA; monolithic high frequency class E PA; optimal design values; power amplifier; size 130 nm; size 65 nm; size 90 nm; spice simulations; switching performance analysis; CMOS integrated circuits; Capacitance; Inductors; Mathematical model; Semiconductor device modeling; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2015 IEEE International Symposium on

Conference_Location

Lisbon

Type

conf

DOI

10.1109/ISCAS.2015.7168978

Filename

7168978