Comparison of PIn and NIp AlGaN UV photodiodes for solar-blind performance

Author

Kuek, J.J. ; Pulfrey, D.L. ; Nener, B.D. ; Dell, J.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Perth, WA, Australia

fYear

2000

fDate

2000

Firstpage

333

Lastpage

336

Abstract

In this paper, n-i-Al_0.33Ga_0.67N/p-GaN (NIp) photodiode structures are examined as an alternative to p-i-Al_0.33Ga_0.6/7Nn-GaN (PIn) structures for improved signal rejection for wavelengths longer than 300 nm in UV solar-blind detectors. The effect of incorporating an additional Al_0.33Ga _0.67N layer for barrier enhancement at the heterointerface of NIp photodiodes is also evaluated. It is shown that even with the inclusion of a barrier enhancement layer, PIn structures are better suited for solar blind detection given the limitation in the growth of doped thick Al_0.33Ga_0.67N layers

Keywords

III-V semiconductors; aluminium compounds; band structure; gallium compounds; interface states; p-i-n photodiodes; semiconductor device models; semiconductor heterojunctions; ultraviolet detectors; 300 nm; Al_0.33Ga_0.67N additional layer; Al_0.33Ga_0.67N-GaN; NIp photodiode structure; PIn photodiode structure; UV photodiodes; UV solar-blind detectors; band offset; heterointerface barrier enhancement; n-i-Al_0.33Ga_0.67N/p-GaN; p-i-Al_0.33Ga_0.6/7Nn-GaN; signal rejection; solar-blind performance; Absorption; Aluminum gallium nitride; Australia; Detectors; Gallium nitride; Heterojunctions; Lighting; Photodetectors; Photodiodes; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939255

Filename

939255