Title :
Electrical properties of Schottky barrier in MSM-diode structures
Author :
Averine, S. ; Chan, Y.C. ; Lam, Y.L.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. Under these conditions, the logarithmic dependence of the reverse current on the reverse bias is a linear function and allows us to evaluate the barrier height, saturation current density and junction ideality factor of the MSM-diode Schottky contact
Keywords :
Schottky barriers; Schottky diodes; current density; metal-semiconductor-metal structures; tunnelling; MSM-diode structures; Schottky barrier; barrier height; barrier height dependence; current-voltage measurements; electric field; electrical behavior; junction ideality factor; reverse bias; reverse current; saturation current density; tunneling; Contacts; Current measurement; Electric variables measurement; Fabrication; Photodetectors; Photonics; Schottky barriers; Substrates; Temperature measurement; Tunneling;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939258
