The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta2O5 gate oxide

N-channel metal oxide semiconductor field effect transistors (MOSFET) using Ta₂O₅ gate oxide were fabricated. The I_DS-V_DS and I_DS-V_GS characteristics were measured. The electron mobility was 333 cm² /V-s. The subthreshold swing was 73 mV/dec. The interface trapped charge density, the surface recombination velocity and the minority carrier lifetime measured from gated diodes were 9.5×10¹² cm^-2-eV^-1, 780 cm/s and 3×10^-6 sec, respectively,