Title :
Deep level studies in GRIN-SCH-SQW GaAs/AlGaAs laser diode structures grown by MBE
Author :
Kaniewska, M. ; Klima, K. ; Barcz, A.
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
Deep level transient spectroscopy, photoluminescence spectroscopy, as well as secondary ion mass spectrometry have been used to characterise graded refractive index separate confinement heterostructure single quantum well GaAs/AlGaAs laser diodes grown by molecular beam epitaxy (MBE). An electron trap at Ec-(0.51-0.79 eV) was found in AlxGa1-xAs with x=0-0.3. It can be identified as the wed-known photoluminescence killer related to the intrinsic point defect-oxygen complex. We conclude that the trap is one of the limiting factors in performance of non-optimum MBE lasers,
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; deep levels; gallium arsenide; gradient index optics; interface states; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; 0.51 to 0.79 eV; GRIN-SCH-SQW GaAs/AlGaAs laser diode structures; GaAs-AlGaAs; MBE; deep level; deep level transient spectroscopy; graded refractive index separate confinement heterostructure; photoluminescence spectroscopy; secondary ion mass spectrometry; single quantum well laser; Buffer layers; Diode lasers; Electron traps; Gallium arsenide; Mass spectroscopy; Molecular beam epitaxial growth; Quantum well lasers; Refractive index; Substrates; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939261
