Deep level studies in GRIN-SCH-SQW GaAs/AlGaAs laser diode structures grown by MBE

Author

Kaniewska, M. ; Klima, K. ; Barcz, A.

Author_Institution

Inst. of Electron Technol., Warsaw, Poland

fYear

2000

fDate

2000

Firstpage

357

Lastpage

360

Abstract

Deep level transient spectroscopy, photoluminescence spectroscopy, as well as secondary ion mass spectrometry have been used to characterise graded refractive index separate confinement heterostructure single quantum well GaAs/AlGaAs laser diodes grown by molecular beam epitaxy (MBE). An electron trap at E_c-(0.51-0.79 eV) was found in Al_xGa_1-xAs with x=0-0.3. It can be identified as the wed-known photoluminescence killer related to the intrinsic point defect-oxygen complex. We conclude that the trap is one of the limiting factors in performance of non-optimum MBE lasers,

Keywords

III-V semiconductors; aluminium compounds; deep level transient spectroscopy; deep levels; gallium arsenide; gradient index optics; interface states; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; 0.51 to 0.79 eV; GRIN-SCH-SQW GaAs/AlGaAs laser diode structures; GaAs-AlGaAs; MBE; deep level; deep level transient spectroscopy; graded refractive index separate confinement heterostructure; photoluminescence spectroscopy; secondary ion mass spectrometry; single quantum well laser; Buffer layers; Diode lasers; Electron traps; Gallium arsenide; Mass spectroscopy; Molecular beam epitaxial growth; Quantum well lasers; Refractive index; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939261

Filename

939261