The electrical properties of oxides-added thick-film resistors on aluminum nitride substrates

Author

Hsieh, Ming-Liang ; Chen, Lih-Shan

Author_Institution

Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan

fYear

2002

fDate

4-6 Dec. 2002

Firstpage

468

Lastpage

471

Abstract

Aluminum nitride, which has better thermal conductivity and the thermal expansion coefficient close to that of silicon, is very suitable for ceramic substrates. However, the commercial thick film resistor pastes are incompatible with AlN substrates. To solve the problem of the incompatibility between the aluminium nitride substrates and commercial thick film resistor paste, various kinds of oxides were added into commercial resistor pastes to improve the electrical characteristics of thick film resistors. The oxides-added resistor pastes were then printed on the aluminum nitride substrates, and the electrical properties of the resistors were investigated.

Keywords

aluminium compounds; thermal conductivity; thermal expansion; thick film resistors; AlN; electrical characteristics; oxides-added thick-film resistors; thermal conductivity; thermal expansion coefficient; thick film resistor pastes; Aluminum nitride; Conducting materials; Electric resistance; Glass; Resistors; Substrates; Temperature; Thermal conductivity; Thermal expansion; Thick films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging, 2002. Proceedings of the 4th International Symposium on

Print_ISBN

0-7803-7682-X

Type

conf

DOI

10.1109/EMAP.2002.1188884

Filename

1188884