DocumentCode :
3321160
Title :
The electrical properties of oxides-added thick-film resistors on aluminum nitride substrates
Author :
Hsieh, Ming-Liang ; Chen, Lih-Shan
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
fYear :
2002
fDate :
4-6 Dec. 2002
Firstpage :
468
Lastpage :
471
Abstract :
Aluminum nitride, which has better thermal conductivity and the thermal expansion coefficient close to that of silicon, is very suitable for ceramic substrates. However, the commercial thick film resistor pastes are incompatible with AlN substrates. To solve the problem of the incompatibility between the aluminium nitride substrates and commercial thick film resistor paste, various kinds of oxides were added into commercial resistor pastes to improve the electrical characteristics of thick film resistors. The oxides-added resistor pastes were then printed on the aluminum nitride substrates, and the electrical properties of the resistors were investigated.
Keywords :
aluminium compounds; thermal conductivity; thermal expansion; thick film resistors; AlN; electrical characteristics; oxides-added thick-film resistors; thermal conductivity; thermal expansion coefficient; thick film resistor pastes; Aluminum nitride; Conducting materials; Electric resistance; Glass; Resistors; Substrates; Temperature; Thermal conductivity; Thermal expansion; Thick films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Materials and Packaging, 2002. Proceedings of the 4th International Symposium on
Print_ISBN :
0-7803-7682-X
Type :
conf
DOI :
10.1109/EMAP.2002.1188884
Filename :
1188884
Link To Document :
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