Title :
A Non Quasi-static Small Signal Model for Long Channel Symmetric DG MOSFET
Author :
Sarkar, Sudipta ; Roy, Ananda S. ; Mahapatra, Santanu
Author_Institution :
Nano Scale Device Res. Lab., Indian Inst. of Sci., Bangalore, India
Abstract :
We propose a compact model for small signal non quasi static analysis of long channel symmetric double gate MOSFET. The model is based on the EKV formalism and is valid in all regions of operation and thus suitable for RF circuit design. Proposed model is verified with professional numerical device simulator and excellent agreement is found well beyond the cut-off frequency.
Keywords :
MOSFET; semiconductor device models; EKV formalism; RF circuit design; double gate MOSFET; non quasi-static small signal model; numerical device simulator; Circuit simulation; Circuit synthesis; MOSFET circuits; Numerical simulation; Radio frequency; Signal analysis; Signal design; Silicon; Very large scale integration; Voltage; Double-Gate MOSFET; Non Quasi-Static Analysis;
Conference_Titel :
VLSI Design, 2010. VLSID '10. 23rd International Conference on
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-5541-6
DOI :
10.1109/VLSI.Design.2010.28
