Title :
Non-damaging chemical photoresist strip process for copper/low-k interconnects
Author :
Clark, Philip G. ; Christenson, Kurt K.
Author_Institution :
FSI Int., Inc., Chaska, MN
Abstract :
Photoresist removal using traditional plasma ash chemistries can cause severe degradation of low-k dielectric properties including increases in k-value and changes in critical dimensions. Restoration processes using silyating agents, for example, hexamethydisilazane (HMDS) have been used to partially restore the dielectric properties of films which have been exposed to a plasma ash. However, these processes do not fully restore the k-value of the as-deposited low-k film and as a result, the non-damaging photoresist removal has become a key challenge in ultra low-k integration. We present, herein, the photoresist strip results on CVD organosilicate glass (OSG), low-k films using ozone-saturated, deionized water (DIO3) in a batch spray processor. This process yields no changes in the low-k dielectric properties or changes in critical dimensions. In addition, we also demonstrate the use of corrosion inhibitors to eliminate copper corrosion during the ozone process
Keywords :
chemical vapour deposition; copper; corrosion inhibitors; dielectric properties; glass; integrated circuit interconnections; photoresists; sputter etching; thin films; CVD; Cu; as-deposited low-k film; batch spray processor; chemical photoresist strip process; chemical vapor deposition; copper corrosion; corrosion inhibitors; deionized water; hexamethydisilazane; low-k dielectric properties; low-k interconnects; nondamaging photoresist removal; organosilicate glass; ozone process; silyating agents; traditional plasma ash chemistries; Ash; Chemical processes; Chemical vapor deposition; Copper; Degradation; Dielectrics; Plasma chemistry; Plasma properties; Resists; Strips;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI
Conference_Location :
Munich
Print_ISBN :
0-7803-8997-2
DOI :
10.1109/ASMC.2005.1438757
