Etch chamber condition-based process control model for shallow trench isolation trench depth control

Author

Gaddam, Sreedhar ; Braun, Martin W.

Author_Institution

Kilby Center, Texas Instrum. Inc., Dallas, TX

fYear

2005

fDate

11-12 April 2005

Firstpage

17

Lastpage

20

Abstract

This paper discusses the development and implementation of an etch chamber condition-based process control model for shallow trench isolation (STI) trench depth (TD) control The novel aspects of the controller are discussed, including PM cycle-based tuning, and measures for excursion protection. The implementation has eliminated the need for manual process recipe adjustment and improved process capability by approximately 30%. Actual process data from pre- and post-implementation demonstrate the efficacy of the proposed approach

Keywords

control system synthesis; etching; integrated circuit manufacture; isolation technology; process capability analysis; process control; process monitoring; PM cycle-based tuning; etch chamber condition; excursion protection; manual process recipe adjustment; process capability; process control model; shallow trench isolation; trench depth control; Ash; Automatic control; Instruments; Mathematical model; Metrology; Monitoring; Process control; Protection; Silicon; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI

Conference_Location

Munich

Print_ISBN

0-7803-8997-2

Type

conf

DOI

10.1109/ASMC.2005.1438760

Filename

1438760