DocumentCode :
3321431
Title :
Etch chamber condition-based process control model for shallow trench isolation trench depth control
Author :
Gaddam, Sreedhar ; Braun, Martin W.
Author_Institution :
Kilby Center, Texas Instrum. Inc., Dallas, TX
fYear :
2005
fDate :
11-12 April 2005
Firstpage :
17
Lastpage :
20
Abstract :
This paper discusses the development and implementation of an etch chamber condition-based process control model for shallow trench isolation (STI) trench depth (TD) control The novel aspects of the controller are discussed, including PM cycle-based tuning, and measures for excursion protection. The implementation has eliminated the need for manual process recipe adjustment and improved process capability by approximately 30%. Actual process data from pre- and post-implementation demonstrate the efficacy of the proposed approach
Keywords :
control system synthesis; etching; integrated circuit manufacture; isolation technology; process capability analysis; process control; process monitoring; PM cycle-based tuning; etch chamber condition; excursion protection; manual process recipe adjustment; process capability; process control model; shallow trench isolation; trench depth control; Ash; Automatic control; Instruments; Mathematical model; Metrology; Monitoring; Process control; Protection; Silicon; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI
Conference_Location :
Munich
Print_ISBN :
0-7803-8997-2
Type :
conf
DOI :
10.1109/ASMC.2005.1438760
Filename :
1438760
Link To Document :
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