Multilayer molybdenum disulfide (MoS2) based tunnel transistor

Conventional and emerging field effect transistor (FET) technologies are approaching its fundamental physical and material limits imposed by the thermionic constraints or “Boltzmann tyranny” that is dependent on the thermal potential. There has been a surge of interest to introduce new devices, and replace silicon by emerging two-dimensional (2D) nanomaterials that can push the scaling and performance limits beyond the capabilities of MOSFET and silicon technologies. Here, we introduce the concept of a quantum mechanical band-to-band tunneling (BTBT) mechanism based devices with multilayer molybdenum disulfide (MoS₂) as the channel material. BTBT mechanism has been investigated as a promising current injection mechanism in semiconductor device that can potentially overcome the adverse impacts of the short channel effects and the thermionic limits in MOSFETs. MoS₂ is being considered as the new super-material for the post-silicon era. This paper also presents the analytical model of the tunneling current in the proposed device.