DocumentCode :
3321897
Title :
Effects of wafer bow and warpage on performance of electrostatic chucks in high volume manufacturing
Author :
Kurkowski, Piotr ; Drizlikh, Sergei ; Sarver, Roger ; Angis, Heath ; Loisel, Patrick
Author_Institution :
Nat. Semicond. Corp., South Portland, ME
fYear :
2005
fDate :
11-12 April 2005
Firstpage :
127
Lastpage :
129
Abstract :
This paper presents the learning, the authors gained when dealing with back side pressure faults (BSPF) on 200 mm interconnect deposition tools equipped with minimum contact area (MCA) electrostatic chucks (ESC). It was found that BSPF´s occurred more likely on chucks running mostly BiCMOS product. BiCMOS product was four times more susceptible to experience this fault than CMOS due to higher wafer bow and warpage which were traced to recrystallization of backside polysilicon at RTP emitter anneal. Moreover, a cost-effective rework scheme was implemented to prolong the life of ESC´s. Long term solution of reducing wafer bow and warpage process is also being pursued
Keywords :
BiCMOS integrated circuits; bending; buckling; electrostatic devices; elemental semiconductors; failure analysis; integrated circuit manufacture; recrystallisation; silicon; work-holding devices; 200 mm; BiCMOS product; RTP emitter anneal; back side pressure faults; backside polysilicon recrystallization; cost-effective rework scheme; interconnect deposition tools; minimum contact area electrostatic chucks; wafer bow; wafer warpage; Annealing; Argon; BiCMOS integrated circuits; CMOS technology; Electrostatics; Frequency; Manufacturing; Semiconductor device manufacture; Silicon; Temperature control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI
Conference_Location :
Munich
Print_ISBN :
0-7803-8997-2
Type :
conf
DOI :
10.1109/ASMC.2005.1438780
Filename :
1438780
Link To Document :
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