DocumentCode :
3322518
Title :
Long-term charge stability of silicon dioxide electrets
Author :
Ichiya, Mitsuo ; Lewiner, Jacques
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Kadoma, Japan
fYear :
1996
fDate :
25-30 Sep 1996
Firstpage :
9
Lastpage :
15
Abstract :
In this paper, we report the investigation of silicon dioxide electrets by using plasma chemical vapor deposition (PCVD) and thermal oxidation process. It is shown that by using a proper process, long-term charge stability can be obtained, even at elevated temperatures. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials with different long-term charge stability
Keywords :
dielectric thin films; electrets; oxidation; paramagnetic resonance; plasma CVD; silicon compounds; thermally stimulated currents; ESR; SiO2; electrets; long-term charge stability; plasma CVD; thermal oxidation; thermally stimulated current; Chemical vapor deposition; Electrets; Oxidation; Paramagnetic resonance; Plasma chemistry; Plasma measurements; Plasma stability; Plasma temperature; Silicon compounds; Stability analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
Type :
conf
DOI :
10.1109/ISE.1996.578030
Filename :
578030
Link To Document :
بازگشت