DocumentCode :
332313
Title :
Effects of electron-hole attraction on quantum-well gain/absorption spectra
Author :
Hsu, Chia-Fu ; Zory, Peter S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume :
2
fYear :
1998
fDate :
3-4 Dec 1998
Firstpage :
215
Abstract :
Gain/absorption spectra for CdZnSe quantum wells have been simulated at 300 K using a two-transition complex gain function. The incorporation of electron-hole attraction effects into this function causes two exciton-like absorption peaks to appear in the spectra at carrier densities above the Mott density
Keywords :
II-VI semiconductors; cadmium compounds; carrier density; excitons; semiconductor quantum wells; visible spectra; zinc compounds; 300 K; CdZnSe; CdZnSe quantum wells; Mott density; carrier densities; electron-hole attraction; electron-hole attraction effects; exciton-like absorption peaks; quantum-well absorption spectra; quantum-well gain spectra; two-transition complex gain function; Absorption; Charge carrier density; Computational modeling; Excitons; Laser modes; Optical scattering; Plasma simulation; Quantum computing; Quantum well lasers; Quantum wells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
Type :
conf
DOI :
10.1109/LEOS.1998.739537
Filename :
739537
Link To Document :
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