Formation and characterization of III-V native oxides for optoelectronic applications

Author

Dupuis, Russell ; Heller, R.D. ; Jae-Hyun Ryou ; Chowdhury, U. ; Curtis, A.P. ; Stillman, G.E. ; Hull, R.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

238

Abstract

Data are presented on the electrical and optical characteristics of heterostructures grown by metalorganic chemical vapor deposition (MOCVD) both before and after oxidation. We have studied GaAs and InGaP doped and undoped “active” layers having various native-oxide “cladding layers” produced by the steam oxidation of AlGaAs and InAlP “window” layers. The optical properties of the heterostructures have been studied using 300 K and 4 K photoluminescence (PL) and cathodoluminescence (CL) and 300 K time-resolved PL

Keywords

III-V semiconductors; MOCVD; cathodoluminescence; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor superlattices; time resolved spectra; 300 K; 4 K; AlGaAs; GaAs; III-V native oxides; InAlP; InGaP; MOCVD; cathodoluminescence; electrical characteristics; metalorganic chemical vapor deposition; native-oxide cladding layers; optical characteristics; optical properties; optoelectronic applications; oxidation; photoluminescence; steam oxidation; time-resolved PL; window layers; Gallium arsenide; III-V semiconductor materials; Materials science and technology; Microelectronics; Optical microscopy; Oxidation; Photoluminescence; Radiative recombination; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739547

Filename

739547