Title :
Formation and characterization of III-V native oxides for optoelectronic applications
Author :
Dupuis, Russell ; Heller, R.D. ; Jae-Hyun Ryou ; Chowdhury, U. ; Curtis, A.P. ; Stillman, G.E. ; Hull, R.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Abstract :
Data are presented on the electrical and optical characteristics of heterostructures grown by metalorganic chemical vapor deposition (MOCVD) both before and after oxidation. We have studied GaAs and InGaP doped and undoped “active” layers having various native-oxide “cladding layers” produced by the steam oxidation of AlGaAs and InAlP “window” layers. The optical properties of the heterostructures have been studied using 300 K and 4 K photoluminescence (PL) and cathodoluminescence (CL) and 300 K time-resolved PL
Keywords :
III-V semiconductors; MOCVD; cathodoluminescence; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor superlattices; time resolved spectra; 300 K; 4 K; AlGaAs; GaAs; III-V native oxides; InAlP; InGaP; MOCVD; cathodoluminescence; electrical characteristics; metalorganic chemical vapor deposition; native-oxide cladding layers; optical characteristics; optical properties; optoelectronic applications; oxidation; photoluminescence; steam oxidation; time-resolved PL; window layers; Gallium arsenide; III-V semiconductor materials; Materials science and technology; Microelectronics; Optical microscopy; Oxidation; Photoluminescence; Radiative recombination; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739547
