10 Gbit/s directly-modulated, high temperature-stability, external fibre grating laser for dense WDM networks

Author

Timofeev, F.N. ; Bayvel, P. ; Wyatt, R. ; Kashyap, R. ; Lealman, I.F. ; Maxwell, G.D.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

360

Abstract

We report on the modulation performance and temperature stability of a fast (up to 10 Gbit/s) InGaAsP-InP MQW semiconductor external fibre grating laser. The combination of high speed direct modulation with low static and dynamic chirp makes this laser very attractive for application in dense WDM optical networks

Keywords

III-V semiconductors; chirp modulation; diffraction gratings; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; wavelength division multiplexing; 10 Gbit/s; Gbit/s directly-modulated; InGaAsP-InP; InGaAsP-InP MQW semiconductor external fibre grating laser; dense WDM networks; dense WDM optical networks; dynamic chirp; external fibre grating laser; high speed direct modulation; high temperature-stability; low static; Chirp modulation; Fiber gratings; Fiber lasers; Laser stability; Optical fiber networks; Quantum well devices; Semiconductor lasers; Temperature; WDM networks; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739711

Filename

739711