Title :
Life tests and failure mechanisms of GaN-AlGaN-InGaN light emitting diodes
Author :
Barton, Daniel L. ; Osinski, Marek
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to Spring 1994. Following the initial studies of rapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number of Nichia NLPB-500 LEDs on a series of cw life tests. This work reviews the failure analysis that was performed on the degraded devices and the degradation mechanisms that were identified
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical testing; semiconductor device testing; GaN-AlGaN-InGaN; GaN-AlGaN-InGaN light emitting diodes; Nichia NLPB-500 LEDs; Nichia blue LEDs; cw life tests; degradation mechanisms; device lifetime; failure analysis; failure mechanisms; high current electrical pulse; life tests; main degradation mechanisms; metal migration; rapid failures; reviews; Absorption; Aluminum gallium nitride; Failure analysis; Gallium nitride; Life estimation; Life testing; Light emitting diodes; Plastics; Temperature distribution; Thermal degradation;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739803
