DocumentCode
3323342
Title
A plastic package GaAs MESFET 5.8 GHz receiver front-end with on-chip matching for ETC system
Author
Low, Eng Chuan ; Nakamura, Hiroshi ; Fujishiro, Hiroki I. ; Yan, Kai Tuan
Author_Institution
Inst. of Microelectron., Singapore
fYear
1999
fDate
1999
Firstpage
43
Lastpage
46
Abstract
A plastic package GaAs MESFET receiver front-end MMIC operating at 5.8 GHz is presented. It has a two stage LNA followed by a dual-gate mixer. Operating at 3 V and 8.3 mA, CG of 20.4 dB, NF of 4.1 dB, and high port-to-port isolations have been achieved. A 3 dB bandwidth of CG is 1 GHz
Keywords
III-V semiconductors; MESFET integrated circuits; MMIC mixers; field effect MMIC; gallium arsenide; impedance matching; integrated circuit design; integrated circuit packaging; microwave links; plastic packaging; radio receivers; 1 GHz; 20.4 dB; 3 V; 4.1 dB; 5.8 GHz; 8.3 mA; ETC system; GaAs; GaAs MESFET front-end chip; dual-gate mixer; front-end MMIC; onchip matching; plastic package receiver front-end; two stage LNA; Bonding; Character generation; Circuit synthesis; Gallium arsenide; MESFETs; MMICs; Plastic packaging; Radio frequency; System-on-a-chip; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location
Anaheim, CA
ISSN
1097-2633
Print_ISBN
0-7803-5604-7
Type
conf
DOI
10.1109/RFIC.1999.805236
Filename
805236
Link To Document