Title :
Effects of PbS doping on thermal conductivity of n-type CoSb3
Author :
Anno, H. ; Tashiro, H. ; Kaneko, H. ; Matsubara, K
Author_Institution :
Sci. Univ. of Tokyo, Japan
Abstract :
Additional PbS doping of heavily doped n-type Co1-xM xSb3 (M=Pd/Pt) has been studied to reduce the thermal conductivity of the material. Although the heavily doped n-type material has good electrical properties, the thermal conductivity is relatively high (about 0.06 W cm-1 K-1). If PbS particles are dispersed throughout the host material, they can be expected to act as phonon scattering centers. Polycrystalline samples were prepared by hot pressing or spark plasma sintering the admixture of Co1-xMxSb3 (M=Pd/Pt) and PbS fine powders. Samples were characterized by X-ray diffraction, electron probe microanalysis, and optical microscope observation. Measurements of the electrical conductivity, the Hall coefficient, the Seebeck coefficient, and the thermal conductivity were performed to study the influence of PbS doping on the electrical and thermoelectrical properties. It was found that PbS particles were uniformly dispersed throughout Co1-x MxSb3 (M=Pd/Pt) host without any decomposition. About 30% reduction of the thermal conductivity can be achieved by additional PbS doping, keeping good electrical properties. This can be attributed to the phonon scattering effect of PbS particles. As a result, the thermoelectric figure of merit of the material increases to more than 1×10-3 K-1
Keywords :
Seebeck effect; cobalt compounds; electron-phonon interactions; lead compounds; palladium compounds; platinum compounds; thermal conductivity; (CoPd)Sb3:PbS; (CoPt)Sb3:PbS; Seebeck coefficient; X-ray diffraction; electron probe microanalysis; phonon scattering centers; thermal conductivity; Conducting materials; Doping; Optical microscopy; Optical scattering; Particle scattering; Phonons; Plasma measurements; Thermal conductivity; Thermoelectricity; X-ray scattering;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740386